Need help about the Intrinsic carrier density and conductivity.
I have tried again and again but never get the answer! Please help me out here.
Given the forbidden band width of Si is Eg=1.21-4.1x10^-4*T [eV], find the Intrinsic carrier density and conductivity. Temperature is 300K, effective mass of electron is 1/3 of rest mass, hole is 1/2 of that, and the mobilities of electron and hole are 0.18m^2/Vs, 0.05m^2/Vs respectively.
The answers are 5.5x10^15 [m^-3] and 2.0x10^-4 [S/m]. I need the solution to get the answers, please.
Here's the formula that I used,
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Given the forbidden band width of Si is Eg=1.21-4.1x10^-4*T [eV], find the Intrinsic carrier density and conductivity. Temperature is 300K, effective mass of electron is 1/3 of rest mass, hole is 1/2 of that, and the mobilities of electron and hole are 0.18m^2/Vs, 0.05m^2/Vs respectively.
The answers are 5.5x10^15 [m^-3] and 2.0x10^-4 [S/m]. I need the solution to get the answers, please.
Here's the formula that I used,
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