hi
in a common emitter bipolar junction transistor when the forward bias voltage across the emitter base junction is increased (after the cut in voltage ) the depletion region across the emitter base junction in a npn transistor decreases ,so it increases the width of the base region (when compared to prior width of the base region) ,so now due to large width there should be increased number of electron hole recombination in the base region resulting in the (increase of base current and decrease of collector current to a small extent ) ,but actually why does the collector current increase across the collector emitter circuit