MeRAM - Makes RAM 1000x More Efficient

MeRAM aka magnetoelectric random access memory is the new type of memory that promises to be at least 1000x more efficient. Developed by a group of engineers at UCLA, MeRAM is extraordinarily power efficient along with very high R/W speeds. It's also a non-volatile type which means it can retain the information even in absence of external power supply. Current generation of memories use a technique called spin-transfer torque (STT) and rely on magnetic spin of electrons. The write operation in these memories requires flow of current; and the process generates heat. MeRAM replaces current with voltage to perform similar action which eliminates the need of moving the electrons via wires. The overall process generates very little amount of heat which makes the memory about 1000x more efficient than current generation of RAM.

[caption id="attachment_44585" align="aligncenter" width="560"] MeRAM By UCLA Engineering Team[/caption]

Engineers expect that this new technological advancement will find place in all the future gadgets, right from mobile phones, tablets to solid state storage devices. More coverage on #-Link-Snipped-#.