Ferroelectric tunnel junction (FTJ) - A new class of memristor
Team of researchers from Japan, France and the UK have developed ferroelectric tunnel junction (FTJ) which exhibits voltage-controlled resistance has created a new class of memristor. Given the ultra-high speed operation of the FTJ, it can be used to form a basic architecture of the computers that can function like a human brain.
Researchers call it an achievement because this new memristor behaves in accord with the well-established physical models allowing precise knowledge of memristive response. The FTJ comprises of two electrodes parted by a ferroelectric layer.
Via: #-Link-Snipped-#
Researchers call it an achievement because this new memristor behaves in accord with the well-established physical models allowing precise knowledge of memristive response. The FTJ comprises of two electrodes parted by a ferroelectric layer.
Via: #-Link-Snipped-#
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