MIT Develops Smallest Gallium Indium Arsenide Transistor Ever, Silicon Domination In Danger!
Silicon is synonym for computer microchips, but a new discovery from a team of researchers at MIT might stop its legacy. Researchers have developed a very tiny transistor using Indium Gallium Arsenide. This new transistor is just 22 nanometers in length.
Scientists all around the world have been trying to find out alternatives for silicon, so that Moore's law doesnt come to an end. According to Gordon Moore, founder of Intel, the number of transistor on a chip will be doubled in every 2 years. The computing power of a chip increases with the number of transistors, but the problem here is as the number of transistor increases, the amount of current that can be produced by the device decreases, resulting in lesser speed of operations. The new transistor provides an excellent solution for the problem and promises to take Moore's law on heights where Silicon can't.
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According to Jesus del Alamo, the Donner Professor of science at MIT's Electrical Engineering and Computer Science department who built the transistor with Jianqian Lin and Dimitri Antoniadis , “We have shown that you can make extremely small Gallium Indium Arsenide MOSFET with excellent logic characteristics, which promises to take Moore's low beyond the reach of Silicon.â€Â The team aims to reduce the length of the transistor below 10 nanometers at the same time improving its electrical performance and speed. Once completed, this can be one of the major milestones in the field of semiconductors.
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Scientists all around the world have been trying to find out alternatives for silicon, so that Moore's law doesnt come to an end. According to Gordon Moore, founder of Intel, the number of transistor on a chip will be doubled in every 2 years. The computing power of a chip increases with the number of transistors, but the problem here is as the number of transistor increases, the amount of current that can be produced by the device decreases, resulting in lesser speed of operations. The new transistor provides an excellent solution for the problem and promises to take Moore's law on heights where Silicon can't.
#-Link-Snipped-#
According to Jesus del Alamo, the Donner Professor of science at MIT's Electrical Engineering and Computer Science department who built the transistor with Jianqian Lin and Dimitri Antoniadis , “We have shown that you can make extremely small Gallium Indium Arsenide MOSFET with excellent logic characteristics, which promises to take Moore's low beyond the reach of Silicon.â€Â The team aims to reduce the length of the transistor below 10 nanometers at the same time improving its electrical performance and speed. Once completed, this can be one of the major milestones in the field of semiconductors.
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