Emitter Base Junction doubt

Block less reversed bias voltage? You mean to say the reverse breakdwon voltage is less or the the value of the potential barrier is less? Whatever be the question...I the answer lies in the doping level of the emitter & the collector. The emitter is more heavily doped than the collector, so the value of reverse bias to be applied is more.
Actually I want to more elaborate the question...😀

i understand the question it perhaps is why we need less biasing voltage for base emitter of order of <1 volt whereas need high voltage of several volt for collector emitter biasing??
i suppose it is as base is lightly doped so if high voltage applied to base then more electrons come in base and as its width is less so due to high electron conc, it may sc and more electrons try to recombine with holes so heavy heat dissipation which may damage it and for collecttor as it is wider and we want max electrons to reach load so high +ve pot also as length more so Resistance more so more voltage is required definitely...
this i suppose.
plz everyone correct me wherever i'm wrong..