Hynix Introduces 15nm NAND Flash; Leaves Intel, Micron Behind
In the race of NAND flash memory chips, Hynix has just surpassed Intel and Micron by producing 15nm NAND flash memory, announced during International Electron Devices Meeting (IEDM). The 15nm NAND flash memory is called as the Middle-1Xnm-generation NAND Flash by Hynix.
In April, this year, Intel and Micron announced that they would be shifting to smaller NAND flash memory chips by introducing 20nm flash memory instead of 25nm and 34nm chips that were produced earlier. This move benefited in terms of less space inside the devices, more memory and cheaper rate for the gadget makers. Since then, 20nm has been the new standard for memory production, only facing competition now, with the introduction of 15nm from Hynix.
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Though producing 15nm flash memory chips was no easy task for Hynix. The two major hurdles were holes appearing in the control gates made from polycrystalline silicon, and electric charge which was leaking from the floating gates neighbouring the control gates. The small amount of space was creating the holes in the control gates which was resolved later by increasing space around the control gates. The extra space was compensated by reducing width of floating gates.
To stop the electricity from leaking, better air gaps were created in during manufacturing process in the insulating firm embedded in chip. This reduces the electric field between the control gates and floating gates by 20%.  A higher voltage was also applied to the word lines adjacent to the the ones being written. This helps in both, reducing leakage and increasing data write speeds.
Hynix has proposed starting production of Middle-1Xnm NAND flash memory around the second half of 2012.
Source: #-Link-Snipped-#Â Image Credit: #-Link-Snipped-#
In April, this year, Intel and Micron announced that they would be shifting to smaller NAND flash memory chips by introducing 20nm flash memory instead of 25nm and 34nm chips that were produced earlier. This move benefited in terms of less space inside the devices, more memory and cheaper rate for the gadget makers. Since then, 20nm has been the new standard for memory production, only facing competition now, with the introduction of 15nm from Hynix.
#-Link-Snipped-#
Though producing 15nm flash memory chips was no easy task for Hynix. The two major hurdles were holes appearing in the control gates made from polycrystalline silicon, and electric charge which was leaking from the floating gates neighbouring the control gates. The small amount of space was creating the holes in the control gates which was resolved later by increasing space around the control gates. The extra space was compensated by reducing width of floating gates.
To stop the electricity from leaking, better air gaps were created in during manufacturing process in the insulating firm embedded in chip. This reduces the electric field between the control gates and floating gates by 20%.  A higher voltage was also applied to the word lines adjacent to the the ones being written. This helps in both, reducing leakage and increasing data write speeds.
Hynix has proposed starting production of Middle-1Xnm NAND flash memory around the second half of 2012.
Source: #-Link-Snipped-#Â Image Credit: #-Link-Snipped-#
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